MBR60100R Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MBR6045 thru MBR60100R
V_RRM = 45 V - 100 V
I_F = 60 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R) Unit
Repetitive peak reverse voltage V_RRM
45
60
80
100
V
RMS reverse voltage
V_RMS
32
42
50
70
V
DC blocking voltage
V_DC
45
60
80
100
V
Continuous forward current
I_F
T_C ≤ 100 °C
60
60
60
60
A
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM T_C = 25 °C, t_p = 8.3 ms
700
700
700
700
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR6045 (R) MBR6060(R) MBR6080 (R) MBR60100 (R) Unit
Diode forward voltage
Reverse current
V_F
I_F = 60 A, T_j = 25 °C
I_R
V_R = 20 V, T_j = 25 °C
V_R = 20 V, T_j = 125 °C
0.65
5
150
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
1.0
0.75
5
150
1.0
0.84
5
150
1.0
0.84
V
5
150
mA
1.0
°C/W
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