MBR40045CTS Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Power
Schottky Diode
Features
 High Surge Capability
Package
MBR40045CTS
V_RRM
I_F
= 45 V
= 400 A
Pin 2
Pin 4
SOT – 227
Pin 1
Pin 3
Maximum Ratings at Tj = 125 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
Tj
Tstg
Conditions
TC ≤ 85 °C
Electrical Characteristics at Tj = 125 °C, unless otherwise specified (Per Leg)
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitance
VF
IF = 200 A, Tj = 25 °C
IF = 200 A, Tj = 125 °C
IR
VR = 36 V, Tj = 25 °C
VR = 36 V, Tj = 125 °C
VR = 1 V, f = 1 MHz, Tj = 25 °C
C
VR = 20 V, f = 1 MHz, Tj = 25 °C
VR = 45 V, f = 1 MHz, Tj = 25 °C
Thermal Characteristics
Thermal resistance, junction - case
RthJC
Values
45
32
45
400
-40 to 175
-40 to 175
min.
Values
typ.
1.1
1
1.2
835
4910
1399
1032
max.
1.2
5
2500
2.16
Unit
V
V
V
A
°C
°C
Unit
V
µA
pF
°C/W
Figure 1: Typical Forward Characteristics(Per Leg)
Figure 2: Typical Reverse Characteristics(Per Leg)
Mar 2012
http://www.genesicsemi.com/silicon-products/schottky-rectifiers/
Pg1 of 3