MBR3545 Datasheet, PDF (1/3 Pages) Naina Semiconductor ltd. – Schottky Power Diode, 35A

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MBR3545 thru MBR35100R
V_RRM = 45 V - 100 V
I_F = 35 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
I_F
I_F,SM
T_j
T_stg
T_C ≤ 110 °C
T_C = 25 °C, t_p = 8.3 ms
45
32
45
35
600
-55 to 150
-55 to 150
60
42
60
35
600
-55 to 150
-55 to 150
80
100
V
57
70
V
80
100
V
35
35
A
600
600
A
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
Diode forward voltage
V_F
I_F = 35 A, T_j = 25 °C
0.68
Reverse current
I_R
V_R = 20 V, T_j = 25 °C
V_R = 20 V, T_j = 125 °C
1.5
25
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
1.5
0.75
1.5
25
1.5
0.84
1.5
25
1.5
0.84
V
1.5
25
mA
1.5
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1