MBR2X080A150 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Electrically Isolated Base Plate

Schottky Rectifier
Module Type 160 A
Features
• High Surge Capability
• Type 150 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MBR2X080A150
V_RRM = 150 V
I_F(AV) = 160 A
SOT-227 Package
Maximum ratings
Parameter
Maximum recurrent peak reverse voltage
Maximum DC blocking voltage
Maximum RMS Voltage
Operating temperature
Storage temperature
Symbol
V_RRM
V_DC
V_RMS
T_j
T_stg
Conditions
Electrical characteristics at 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward voltage*
(per leg)
I_F(AV)
I_FSM
V_F
T_C = 110 °C
8.3 ms, half sine
I_FM = 80 A, T_j = 25 °C
I_FM = 80 A, T_j = 125 °C
Maximum instantaneous reverse current at
rated DC blocking voltage (per leg)
I_R
Isolation voltage
V_iSO
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
A.C. 1 minute
Thermal characteristics
Maximum thermal resistance junction to case
(per leg)
R_Θjc
* Pulse Test: Pulse width 300 µs, Duty < 2 %
Value
Unit
150
V
150
V
105
V
-40 to 150
°C
-40 to 150
°C
Value
160
900
0.88
0.76
3
10
30
2500
0.60
Unit
A
A
V
V
mA
mA
mA
V
°C/W
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