MBR20045CT Datasheet, PDF (1/3 Pages) Naina Semiconductor ltd. – Silicon Schottky Diode, 200A

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V_RRM
• Not ESD Sensitive
MBR20045CT thru MBR200100CTR
V_RRM = 45 V - 100 V
I_F(AV) = 200 A
Twin Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
57
80
-55 to 150
-55 to 150
100
V
70
V
100
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R) Unit
Average forward current
(per pkg)
Peak forward surge
current (per leg)
I_F(AV)
I_FSM
T_C = 125 °C
t_p = 8.3 ms, half sine
Maximum forward
voltage (per leg)
V_F
Reverse current at rated
DC blocking voltage
I_R
(per leg)
Thermal characteristics
I_FM = 100 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
Thermal resistance,
junction-case, per leg
R_ΘJC
200
1500
0.70
1
10
30
0.45
200
1500
0.75
1
10
30
0.45
200
1500
0.84
1
10
30
0.45
200
1500
0.84
1
10
30
0.45
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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