MBR12045CT Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V_RRM
• Not ESD Sensitive
MBR12045CT thru MBR120100CTR
V_RRM = 45 V - 100 V
I_F(AV) = 120 A
Twin Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR12045CT(R) MBR12060CT(R) MBR12080CT(R) MBR120100CT(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
57
80
-55 to 150
-55 to 150
100
V
70
V
100
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR12045CT(R) MBR12060CT(R) MBR12080CT(R) MBR120100CT(R) Unit
Average forward current
(per pkg)
I_F(AV)
T_C = 125 °C
120
120
Peak forward surge
current (per leg)
I_FSM t_p = 8.3 ms, half sine
800
800
Maximum forward
voltage (per leg)
V_F I_FM = 60 A, T_j = 25 °C
0.7
0.75
Reverse current at rated
T_j = 25 °C
1
1
DC blocking voltage
I_R
T_j = 100 °C
10
10
(per leg)
T_j = 150 °C
30
30
Thermal characteristics
Thermal resistance,
junction-case, per leg
R_ΘJC
0.80
0.80
120
800
0.84
1
10
30
0.80
120
A
800
A
0.84
V
1
10
mA
30
0.80
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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