MBR12020CT Datasheet, PDF (1/3 Pages) TRANSYS Electronics Limited – SCHOTTKY DIODES MODULE TYPE 120A

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V_RRM
• Not ESD Sensitive
MBR12020CT thru MBR12040CTR
V_RRM = 20 V - 40 V
I_F(AV) = 120 A
Twin Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit
Repetitive peak
reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
V
28
V
40
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12060CT(R) Unit
Average forward
current (per pkg)
I_F(AV)
T_C = 125 °C
120
120
Peak forward surge
current (per leg)
I_FSM t_p = 8.3 ms, half sine
800
800
Maximum forward
voltage (per leg)
V_F I_FM = 60 A, T_j = 25 °C
0.70
0.70
Reverse current at
T_j = 25 °C
1
1
rated DC blocking
I_R
T_j = 100 °C
10
10
voltage (per leg)
T_j = 150 °C
30
30
Thermal characteristics
Thermal resistance,
junction-case, per leg
R_ΘJC
0.80
0.80
120
800
0.70
1
10
30
0.80
120
A
800
A
0.70
V
1
10
mA
30
0.80
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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