MBR120200CTR Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200 V V_RRM
• Not ESD Sensitive
MBR120150CT thru MBR120200CTR
V_RRM = 150 V - 200 V
I_F(AV) = 120 A
Twin Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR120150CT(R)
MBR120200CT(R)
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
150
106
150
-55 to 150
-55 to 150
200
141
200
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR120150CT(R)
Average forward current
(per pkg)
Peak forward surge
current (per leg)
Maximum forward voltage
(per leg)
Reverse current at rated
DC blocking voltage (per
leg)
Thermal characteristics
Thermal resistance,
junction-case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 60 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
120
800
0.88
1
10
30
0.80
MBR120200CT(R)
120
800
0.92
1
10
30
0.80
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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