M3P100A80 Datasheet, PDF (1/2 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
M3P100A-80 thru M3P100A-160
V_RRM = 800 V - 1600 V
I_F = 100 A
Features
• Terminals and the mounting plate are electrically isolated
• Types up to 1600 V V_RRM
• Modules can be installed in the same cooling fin as other
modules, thus saving installation space
• Diode chips are coated with a glass of zinc oxide, making
them highly resistant to temperature and huminity variation
• 6 diode chips are connected to the 3-phase bridge rectifying
circuit inside the module; a cost effective feature
Three Phase Package
Applications
• Inverters for AC motors
• Power supply units for DC motors
• DC power supply units for battery ch
• General purpose DC power supply u
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Continuous forward current
Surge non-repetitive forward current,
Half Sine Wave
I²t
Operating temperature
Storage temperature
Tightening torque
Vibration resistance
Dielectric strength
Net weight
V_RRM
V_RSM
I_F
I_F,SM
I²t
T_j
T_stg
T_C ≤ 103 °C
T_C = 25 °C, t_p = 8.3 ms
M3P100A-80
800
880
100
1200
6000
-40 to 150
-40 to 125
25±2
5
2000 VAC 1 min
150
M3P100A-160
1600
1700
100
1200
6000
-40 to 150
-40 to 125
25±2
5
2000 VAC 1 min
150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction - case
V_F
R_thJC
Conditions
I_F = 100 A, T_j = 25 °C
V_R = V_RRM, T_j = 150 °C
M3P100A-80
1.15
10
0.22
M3P100A-160
1.15
10
0.22
Unit
V
V
A
A
A²S
°C
°C
kg-cm
G
g
Unit
V
mA
°C/W
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