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KBPC5006TW Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Single Phase Silicon Bridge Rectifier
Single Phase Silicon
Bridge Rectifier
Features
• High efficiency
• Silicon junction
• Metal case
• Types from 600 V to 1000 V VRRM
• Not ESD Sensitive
Mechanical Data
Case: Mounted in the bridge encapsulation
Mounting: Hole for #10 screw
Polarity: Marked on case
KBPC5006T/W thru KBPC5010T/W
VRRM = 600 V - 1000 V
IO = 50 A
KBPC-T/W Package
Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
Parameter
Symbol
Conditions
KBPC5006T/W KBPC5008T/W KBPC5010T/W
Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
600
800
1000
V
420
560
700
V
600
800
1000
V
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
KBPC5006T/W KBPC5008T/W KBPC5010T/W
Unit
Maximum average forward rectified
current
IO
Tc = 40 °C
50
Peak forward surge current
IFSM
8.3 ms half sine-wave
400
Maximum instantaneous forward
voltage per leg
VF
IF = 25.0 A
1.1
Maximum DC reverse current at
rated DC blocking voltage per leg
IR
Tc = 25 °C
Tc = 100 °C
5
500
Thermal characteristics
Typical thermal resistance per leg 1 RΘJC
2.5
50
50
A
400
400
A
1.1
1.1
V
5
5
μA
500
500
2.5
2.5
°C/W
1 - Thermal resistance from Junction to Ambient on P.C. board mounting
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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