KBPC3510TW Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High efficiency

Single Phase Silicon
Bridge Rectifier
Features
• High efficiency
• Silicon junction
• Metal case
• Types from 600 V to 1000 V V_RRM
• Not ESD Sensitive
Mechanical Data
Case: Mounted in the bridge encapsulation
Mounting: Hole for #10 screw
Polarity: Marked on case
KBPC3506T/W thru KBPC3510T/W
V_RRM = 600 V - 1000 V
I_O = 35 A
KBPC-T/W Package
Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
Parameter
Symbol
Conditions
KBPC3506T/W KBPC3508T/W KBPC3510T/W
Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
600
800
1000
V
420
560
700
V
600
800
1000
V
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
KBPC3506T/W KBPC3508T/W KBPC3510T/W
Unit
Maximum average forward rectified
current
I_O
T_c = 55 °C
35
Peak forward surge current
I_FSM
8.3 ms half sine-wave
400
Maximum instantaneous forward
voltage per leg
V_F
I_F = 17.5 A
1.1
Maximum DC reverse current at
rated DC blocking voltage per leg
I_R
T_c = 25 °C
T_c = 100 °C
5
500
Typical junction capacitance ¹
C_j
300
Thermal characteristics
Typical thermal resistance ²
R_ΘJC
1.4
35
35
A
400
400
A
1.1
1.1
V
5
5
μA
500
500
300
300
pF
1.4
1.4
°C/W
1 _{- Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.}
2 _{- Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink}
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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