KBPC35005TW Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Single Phase Silicon Bridge Rectifier

Single Phase Silicon
Bridge Rectifier
Features
• High efficiency
• Silicon junction
• Metal case
• Types from 50 V to 400 V V_RRM
• Not ESD Sensitive
Mechanical Data
Case: Mounted in the bridge encapsulation
Mounting: Hole for #10 screw
Polarity: Marked on case
KBPC35005T/W thru KBPC3504T/W
V_RRM = 50 V - 400 V
I_O = 35 A
KBPC-T/W Package
Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
Parameter
Symbol
Conditions KBPC35005T/W KBPC3501T/W KBPC3502T/W KBPC3504T/W Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
50
100
200
400
V
35
70
140
280
V
50
100
200
400
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions KBPC35005T/W KBPC3501T/W KBPC3502T/W KBPC3504T/W Unit
Maximum average forward rectified
current
I_O
T_c = 55 °C
35
35
35
35
A
Peak forward surge current
I_FSM 8.3 ms half sine-wave
400
400
400
400
A
Maximum instantaneous forward
voltage per leg
V_F
I_F = 17.5 A
1.1
1.1
1.1
1.1
V
Maximum DC reverse current at
rated DC blocking voltage per leg
I_R
T_c = 25 °C
T_c = 100 °C
5
500
5
500
5
500
5
μA
500
Typical junction capacitance ¹
C_j
300
300
300
300
pF
Thermal characteristics
Typical thermal resistance ²
R_ΘJC
1.4
1.4
1.4
1.4
°C/W
1 _{- Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.}
2 _{- Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink}
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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