KBP206G Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Bridge Rectifier

Single Phase Glass Passivated
Silicon Bridge Rectifier
KBP206G thru KBP210G
V_RRM = 600 V - 1000 V
I_O = 2 A
Features
• Ideal for printed circuit board
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
• Built-in printed circuit board stand-offs
• High temperature soldering guaranteed 265°C/ 10 seconds
• High case dielectric strength
• Types from 600 V to 1000 V V_RRM
• Not ESD Sensitive
KBP Package
Mechanical Data
Case: Reliable low cost construction
Terminals: Plated leads, solderable per MIL-STD-202,
Method 208
Mounting position: Any
Weight: 0.065 oz, 2.2 grams
Maximum ratings at Ta = 25 °C (ambient temperature), unless otherwise specified
Parameter
Symbol
Conditions
KBP206G
KBP208G
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
600
420
600
-55 to 150
-55 to 150
800
560
800
-55 to 150
-55 to 150
Electrical characteristics at Ta = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
KBP206G
Maximum average forward
rectified current
I_O
T_a = 50 °C
2
Peak forward surge current
I_FSM
single sine-wave
60
Maximum instantaneous
forward voltage per leg
V_F
I_F = 2 A
1.1
Maximum reverse current at
T_a = 25 °C
10
rated DC blocking voltage per
I_R
leg
T_a = 100 °C
500
Thermal characteristics
Thermal resistance
R_ΘJL
25
KBP208G
2
60
1.1
10
500
25
KBP210G
1000
700
1000
-55 to 150
-55 to 150
KBP210G
2
60
1.1
10
500
25
Unit
V
V
V
°C
°C
Unit
A
A
V
μA
°C/W
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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