KBL606G Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Bridge Rectifier

Single Phase Glass Passivated
Silicon Bridge Rectifier
Features
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded plastic
technique
• High surge current capability
• Types from 50 V to 400 V V_RRM
• Not ESD Sensitive
KBL606G thru KBL610G
V_RRM = 600 V - 1000 V
I_O = 6 A
KBL Package
Mechanical Data
Case: Molded plastic
Terminals: Plated terminals, solderable per MIL-STD-
202F, Method 208
Polarity: Marked on body
Weight: 0.167 ounce, 5 grams
Mounting position: Any
Maximum ratings at Ta = 25 °C (ambient temperature), unless otherwise specified
Parameter
Symbol
Conditions
KBL606G
KBL608G
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
600
420
600
-55 to 150
-55 to 150
800
560
800
-55 to 150
-55 to 150
Electrical characteristics at Ta = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
KBL606G
Maximum average forward
rectified current
I_O
T_a = 50 °C
6
Peak forward surge current
I_FSM
single sine-wave
180
Maximum instantaneous
forward voltage per leg
V_F
I_F = 6 A
1.1
Maximum reverse current at
T_a = 25 °C
5
rated DC blocking voltage per
I_R
leg
T_a = 125 °C
100
KBL608G
6
180
1.1
5
100
KBL610G
Unit
1000
V
700
V
1000
V
-55 to 150
°C
-55 to 150
°C
KBL610G
Unit
6
A
180
A
1.1
V
5
μA
100
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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