KBJ2506G Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Bridge Rectifier

Single Phase Glass Passivated
Silicon Bridge Rectifier
Features
• Ideal for printed circuit board
• Low forward voltage drop, high current capability
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
• Reliable, low cost construction utilizing molded
• Types from 600 V to 1000 V V_RRM
• Not ESD Sensitive
KBJ2506G thru KBJ2510G
V_RRM = 600 V - 1000 V
I_O = 25 A
KBJ Package
Maximum ratings at Ta = 25 °C (ambient temperature), unless otherwise specified
Parameter
Symbol
Conditions
KBJ2506G
KBJ2508G
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
600
420
600
-55 to 125
-55 to 150
800
560
800
-55 to 125
-55 to 150
Electrical characteristics at Ta = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
KBJ2506G
Maximum average forward
rectified current
Peak forward surge current
Maximum instantaneous
forward voltage per leg
Maximum reverse current at
rated DC blocking voltage per
leg
I_O
T_c = 110 °C
T_a = 25 °C
I_FSM 8.3 ms single sine-wave
V_F
I_F = 12.5 A
I_R
T_a = 25 °C
T_a = 125 °C
25
4.2
350
1.05
10
500
KBJ2508G
25
4.2
350
1.05
10
500
KBJ2510G
Unit
1000
V
700
V
1000
V
-55 to 125
°C
-55 to 150
°C
KBJ2510G
Unit
25
A
4.2
350
A
1.05
V
10
μA
500
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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