KBJ25005G Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Bridge Rectifier

Single Phase Glass Passivated
Silicon Bridge Rectifier
Features
• Ideal for printed circuit board
• Low forward voltage drop, high current capability
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
• Reliable, low cost construction utilizing molded
plastic technique
• Types from 50 V to 400 V V_RRM
• Not ESD Sensitive
KBJ25005G thru KBJ2504G
V_RRM = 50 V - 400 V
I_O = 25 A
KBJ Package
Maximum ratings at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
KBJ25005G KBJ2501G KBJ2502G KBJ2504G Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
50
100
200
400
V
35
70
140
280
V
50
100
200
400
V
-55 to 125 -55 to 125 -55 to 125 -55 to 125 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics at Tj = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
KBJ25005G KBJ2501G KBJ2502G KBJ2504G Unit
Maximum average forward
rectified current
I_O
T_c = 110 °C
T_a = 25 °C
25
4.2
Peak forward surge current
I_FSM 8.3 ms single sine-wave
350
Maximum instantaneous
forward voltage per leg
V_F
I_F = 12.5 A
1.05
Maximum reverse current at
rated DC blocking voltage per
I_R
T_a = 25 °C
10
leg
T_a = 125 °C
500
25
4.2
350
1.05
10
500
25
25
4.2
4.2
A
350
350
A
1.05
1.05
V
10
10
μA
500
500
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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