GKR2604 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 1600 V V_RRM
• Equivalent to SKR26 Series
• Not ESD Sensitive
GKR26/04 thru GKR26/16
V_RRM = 400 V - 1600 V
I_F =25 A
22
DO-4 Package
1
1
GKR
Maximum ratings, at T_j = 25 °C, unless otherwise specified (GKN has leads reversed)
Parameter
Symbol
Conditions
GKR26/04 GKR26/08 GKR26/12 GKR26/14 GKR26/16 Unit
Repetitive peak reverse voltage V_RRM
400
DC blocking voltage
V_DC
400
Continuous forward current
I_F
T_C ≤ 100 °C
25
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM T_C = 25 °C, t_p = 10 ms
375
800
1200
1400
1600
V
800
1200
1400
1600
V
25
25
25
25
A
375
375
375
375
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
GKR26/04 GKR26/08 GKR26/12 GKR26/14 GKR26/16 Unit
Diode forward voltage
Reverse current
V_F
I_F = 60 A, T_j = 25 °C
I_R
V_R = V_RRM, T_j = 180 °C
1.55
4
1.55
1.55
4
4
1.55
1.55
V
4
4
mA
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
2.00
2.00
2.00
2.00
2.00
K/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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