GKR13004 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
GKR130/04 thru GKR130/18
V_RRM = 400 V - 1800 V
I_F =165 A
Features
• High Surge Capability
• Types up to 1800 V V_RRM
• Equivalent to SKR130 Series
• Not ESD Sensitive
DO-8 Package
2
1
2
1
GKR
Maximum ratings, at T_j = 25 °C, unless otherwise specified (GKN has leads reversed)
Parameter
Symbol Conditions GKR130/04 GKR130/08 GKR130/12 GKR130/14 GKR130/16GKR130/18Unit
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
V_RRM
V_DC
I_F
T_C ≤ 100 °C
I_F,SM T_C = 25 °C, t_p = 10 ms
400
400
165
2500
800
800
165
2500
1200
1200
165
2500
1400
1400
165
2500
1600
1600
165
2500
1800 V
1800 V
165
A
2500 A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Conditions GKR130/04 GKR130/08 GKR130/12 GKR130/14 GKR130/16GKR130/18Unit
Diode forward voltage
Reverse current
V_F I_F = 60 A, T_j = 25 °C
1.5
1.5
1.5
1.5
1.5
1.5
V
I_R V_R = V_RRM, T_j = 180 °C
22
22
22
22
22
22 mA
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.35
0.35
0.35
0.35
0.35
0.35 K/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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