GKN24004 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
GKN240/04 thru GKN240/18
V_RRM = 400 V - 1800 V
I_F = 320 A
Features
• High Surge Capability
• Types from 400 V to 1800 V V_RRM
• Equivalent to SKN240 Series
• Not ESD Sensitive
DO-9 Package
2
11
1
GKN
2
2
Maximum ratings, at T_j = 25 °C, unless otherwise specified (GKR has leads reversed)
Parameter
Symbol Conditions GKN240/04 GKN240/08 GKN240/12 GKN240/14 GKN240/16GKN240/18 Unit
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
V_RRM
V_DC
I_F
T_C ≤ 100 °C
I_F,SM T_C = 25 °C, t_p = 10 ms
400
400
320
6000
800
800
320
6000
1200
1200
320
6000
1400
1400
320
6000
1600
1600
320
6000
1800 V
1800 V
320
A
6000 A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Conditions GKN240/04 GKN240/08 GKN240/12 GKN240/14 GKN240/16GKN240/18 Unit
Diode forward voltage
Reverse current
V_F I_F = 60 A, T_j = 25 °C
1.4
1.4
1.4
1.4
1.4
1.4
V
I_R V_R = V_RRM, T_j = 180 °C
60
60
60
60
60
60 mA
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.20
0.20
0.20
0.20
0.20
0.20 K/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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