English
Language : 

GBU6A Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 100 Volts CURRENT - 6.0 Amperes)
GBU6A thru GBU6G
Single Phase Glass Passivated
Silicon Bridge Rectifier
VRRM = 50 V - 400 V
IO = 6 A
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High case dielectric strength of 1500 VRMS
• Glass passivated chip junction
• Ideal for printed circuit boards
• High surge overload rating
• High temperature soldering guaranteed: 260⁰C/ 10
seconds, 0.375 (9.5mm) lead length
• Not ESD Sensitive
GBU Package
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads, solderable per MIL-STD-750 Method 2026.
Mounting position: Any
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
GBU6A
GBU6B
GBU6D
GBU6G
Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
50
100
200
400
V
35
70
140
280
V
50
100
200
400
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
GBU6A
Maximum average forward rectified
current 1,2
IO
Tc = 100 °C
6.0
Peak forward surge current
IFSM tp = 8.3 ms, half sine
175
Maximum instantaneous forward
voltage drop per leg
VF
IF = 6 A
1.1
Maximum DC reverse current at
rated DC blocking voltage per leg
IR
Ta = 25 °C
Ta = 125 °C
5
500
Rating for fusing
I2t
t < 8.3 ms
127
Typical junction capacitance per
leg 3
Cj
211
Typical thermal resistance per leg 1,2
RΘJA
RΘJL
7.4
2.2
1 - Device mounted on 65 mm x 35 mm x 1.5 mm Al plate heatsink
2 - Recommended mounted position is to bolt down device on a heatsink with silicon
thermal compond for maximum heat transfer using #6 screw.
3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V
GBU6B
6.0
175
1.1
5
500
127
211
7.4
2.2
GBU6D
6.0
175
1.1
5
500
127
211
7.4
2.2
GBU6G
6.0
175
1.1
5
500
127
211
7.4
2.2
Unit
A
A
V
μA
A2sec
pF
°C/W
www.genesicsemi.com/silicon-products/bridge-rectifiers/
1