GB50SLT06-CAL_15 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode

Silicon Carbide Power
Schottky Diode
Features
 650 V Schottky rectifier
 175 °C maximum operating temperature
 Temperature independent switching behavior
 Superior surge current capability
 Positive temperature coefficient of VF
 Extremely fast switching speeds
 Superior figure of merit QC/IF
Advantages
 Improved circuit efficiency (Lower overall cost)
 Low switching losses
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
 Low reverse leakage current at operating temperature
Die Datasheet
GB50SLT06-CAL
V_RRM
I_F @ 25 ^oC
Q_C
= 650 V
= 100 A
= 158 nC
Die Size = 4.5 mm x 4.5 mm
Applications
 Automotive Traction Inverters
 Power Factor Correction (PFC)
 Switched-Mode Power Supply (SMPS)
 Solar Inverters
 Wind Turbine Inverters
 Motor Drives
 Induction Heating
 Uninterruptible Power Supply (UPS)
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I²t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF
IF(RMS)
IF,SM
IF,max
∫i² dt
Ptot
Tj , Tstg
TC = 25 °C, RthJC = 0.24
TC ≤ 135 °C, RthJC = 0.24
TC ≤ 135 °C, RthJC = 0.24
TC = 25 °C, tP = 10 ms
TC = 135 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 135 °C, tP = 10 ms
TC = 25 °C, RthJC = 0.24
Values
650
100
50
87
350
313
1625
450
300
620
-55 to 175
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 50 A, Tj = 25 °C
IF = 50 A, Tj = 175 °C
IR
VR = 650 V, Tj = 25 °C
VR = 650 V, Tj = 175 °C
QC
IF ≤ IF,MAX
VR = 400 V
dIF/dt = 200 A/μs
ts
Tj = 175 °C
VR = 400 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 650 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.5
2.4
1
10
158
50
2940
203
155
max.
1.8
3.0
100
500
Unit
V
A
A
A
A
A
A²s
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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