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GB10SLT12-CAL_15 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode | |||
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Silicon Carbide Power
Schottky Diode
Features
ï· 1200 V Schottky rectifier
ï· 175 °C maximum operating temperature
ï· Temperature independent switching behavior
ï· Superior surge current capability
ï· Positive temperature coefficient of VF
ï· Extremely fast switching speeds
ï· Superior figure of merit QC/IF
Advantages
ï· Improved circuit efficiency (Lower overall cost)
ï· Low switching losses
ï· Ease of paralleling devices without thermal runaway
ï· Smaller heat sink requirements
ï· Low reverse recovery current
ï· Low device capacitance
ï· Low reverse leakage current at operating temperature
Die Datasheet
GB10SLT12-CAL
VRRM
IF @ 25 oC
QC
= 1200 V
= 25 A
= 31 nC
Die Size = 2.15 mm x 2.15 mm
Applications
ï· Power Factor Correction (PFC)
ï· Switched-Mode Power Supply (SMPS)
ï· Solar Inverters
ï· Wind Turbine Inverters
ï· Motor Drives
ï· Induction Heating
ï· Uninterruptible Power Supply (UPS)
ï· High Voltage Multipliers
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF
IF(RMS)
IF,SM
IF,max
â«i2 dt
Ptot
Tj , Tstg
TC = 25 °C, RthJC = 0.8
TC ⤠150 °C, RthJC = 0.8
TC ⤠150 °C, RthJC = 0.8
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, RthJC = 0.8
Values
1200
25
10
17
65
55
280
21
15
190
-55 to 175
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 10 A, Tj = 25 °C
IF = 10 A, Tj = 175 °C
IR
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
QC
ts
IF ⤠IF,MAX
dIF/dt = 200 A/μs
Tj = 175 °C
VR = 400 V
VR = 960 V
VR = 400 V
VR = 960 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.5
2.6
5
10
31
52
< 25
490
45
33
max.
1.8
3.0
50
100
Unit
V
A
A
A
A
A
A2s
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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