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GB10SLT12-CAL Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode
Silicon Carbide Power
Schottky Diode
Electrical Datasheet*
Features
 1200 V Schottky rectifier
 175 °C maximum operating temperature
 Positive temperature coefficient of VF
 Fast switching speeds
 Superior figure of merit QC/IF
GB10SLT12-CAL
VRRM
VF
IF
QC
= 1200 V
= 1.55 V
= 10 A
= 52 nC
Advantages
 Improved circuit efficiency (Lower overall cost)
 Significantly reduced switching losses compare to Si PiN
diodes
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 High Voltage Multipliers
 Military Power Supplies
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF(RMS)
IF,SM
IF,max
∫i2 dt
Ptot
Tj , Tstg
TC ≤ 150 °C
TC ≤ 150 °C
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C
Values
1200
10
17
65
55
280
21
15
190
-55 to 175
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 10 A, Tj = 25 °C
IF = 10 A, Tj = 175 °C
IR
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
QC
ts
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 175 °C
VR = 400 V
VR = 960 V
VR = 400 V
VR = 960 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
1.35
0.5
Values
typ.
1.55
2.6
5.0
13
31
52
< 25
490
45
33
max.
1.7
3.0
40
100
Unit
V
A
A
A
A
A2s
W
°C
Unit
V
µA
nC
ns
pF
*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC
Semiconductor).
Oct 2013
http://www.genesicsemi.com/index.php/hit-sic/baredie
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