GB100XCP12-227 Datasheet, PDF (1/6 Pages) GeneSiC Semiconductor, Inc. – IGBT/SiC Diode Co-pack

IGBT/SiC Diode Co-pack
Features
 Optimal Punch Through (OPT) technology
 SiC freewheeling diode
 Positive temperature coefficient for easy paralleling
 Extremely fast switching speeds
 Temperature independent switching behavior of SiC rectifier
 Best RBSOA/SCSOA capability in the industry
 High junction temperature
 Industry standard packaging
GB100XCP12-227
Package
 RoHS Compliant
32
31
V_CES
=
I_CM
=
V_CE(SAT) =
1200 V
100 A
1.9 V
2
1
Advantages
 Industry's highest switching speeds
 High temperature operation
 Improved circuit efficiency
 Low switching losses
3
SOT – 227
Applications
 Solar Inverters
 Aerospace Actuators
 Server Power Supplies
 Resonant Inverters > 100 kHz
 Inductive Heating
 Electronic Welders
Maximum Ratings at T_j = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
IGBT
Collector-Emitter Voltage
DC-Collector Current
Peak Collector Current
Gate Emitter Peak Voltage
IGBT Short Circuit SOA
Operating Temperature
Storage Temperature
Isolation Voltage
Free-wheeling Silicon Carbide diode
DC-Forward Current
Non Repetitive Peak Forward Current
Surge Non Repetitive Forward Current
V_CES
I_C
I_CM
V_GES
t_psc
T_vj
T_stg
V_ISOL
I_F
I_FM
I_F,SM
T_C ≤ 130 °C
Limited by T_vjmax
V_CC = 900 V, V_CEM ≤ 1200 V
V_GE ≤ 15 V, Tv_j ≤ 125 ºC
I_SOL < 1 mA, 50/60 Hz, t = 1 s
T_C ≤ 130 ºC
T_C = 25 ºC, tP = 10 μs
tP = 10 ms, half sine, T_C = 25 ºC
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - case
R_thJC
R_thJC
IGBT
SiC Diode
Mechanical Properties
Mounting Torque
M_d
Terminal Connection Torque
Weight
Case Color
Dimensions
Values
1200
100
200
± 20
10
-40 to +175
-40 to +175
3000
100
tbd
tbd
0.08
0.53
Values
min. typ. max.
1.5
1.3
1.5
29
Black
38 x 25.4 x 12
Unit
V
A
A
V
μs
°C
°C
V
A
A
A
°C/W
°C/W
Nm
Nm
g
mm
Feb 2012
http://www.genesicsemi.com/index.php/sic-products/copack
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