GB05SHT12-CAU_15 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – High Temperature Silicon Carbide Power Schottky Diode

Die Datasheet
GB05SHT12-CAU
High Temperature Silicon Carbide
Power Schottky Diode
Features
 1200 V Schottky rectifier
 210 °C maximum operating temperature
 Zero reverse recovery charge
 Superior surge current capability
 Positive temperature coefficient of V_F
 Temperature independent switching behavior
 Lowest figure of merit Q_C/I_F
 Available screened to Mil-PRF-19500
V_RRM
= 1200 V
I_F @ 25 ^oC = 8 A
Q_C
= 17 nC
Die Size = 1.6 mm x 1.6 mm
Advantages
 High temperature operation
 Improved circuit efficiency (Lower overall cost)
 Low switching losses
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Industry’s lowest reverse recovery charge
 Industry’s lowest device capacitance
 Ideal for output switching of power supplies
 Best in class reverse leakage current at operating temperature
Applications
 Down Hole Oil Drilling
 Geothermal Instrumentation
 Solenoid Actuators
 General Purpose High-Temperature Switching
 Amplifiers
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
Maximum Ratings at T_j = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I²t value
Power dissipation
Operating and storage temperature
V_RRM
I_F
I_F
I_F(RMS)
I_F,SM
I_F,max
∫i² dt
P_tot
T_j , T_stg
T_C = 25 °C, R_thJC = 3.4
T_C ≤ 190 °C, R_thJC = 3.4
T_C ≤ 190 °C, R_thJC = 3.4
T_C = 25 °C, t_P = 10 ms
T_C = 25 °C, t_P = 10 µs
T_C = 25 °C, t_P = 10 ms
T_C = 25 °C, R_thJC = 3.4
Values
1200
8
2.5
4.3
30
120
5
66
-55 to 210
Electrical Characteristics at T_j = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
V_F
I_F = 2.5 A, T_j = 25 °C
I_F = 2.5 A, T_j = 210 °C
I_R
V_R = 1200 V, T_j = 25 °C
V_R = 1200 V, T_j = 210 °C
Q_C
t_s
I_F ≤ I_F,MAX
dI_F/dt = 200 A/μs
T_j = 210 °C
V_R = 400 V
V_R = 960 V
V_R = 400 V
V_R = 960 V
V_R = 1 V, f = 1 MHz, T_j = 25 °C
C
V_R = 400 V, f = 1 MHz, T_j = 25 °C
V_R = 1000 V, f = 1 MHz, T_j = 25 °C
min.
Values
typ.
1.6
2.8
1
25
17
29
< 25
237
25
20
max.
10
200
Unit
V
A
A
A
A
A
A²S
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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