GB01SLT12-214 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode

Silicon Carbide Power
Schottky Diode
Features
 1200 V Schottky rectifier
 175 °C maximum operating temperature
 Temperature independent switching behavior
 Superior surge current capability
 Positive temperature coefficient of V_F
 Extremely fast switching speeds
 Superior figure of merit Q_C/I_F
Advantages
 Improved circuit efficiency (Lower overall cost)
 Low switching losses
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
 Low reverse leakage current at operating temperature
GB01SLT12-214
Package
 RoHS Compliant
V_RRM
= 1200 V
I_{F (Tc = 25°C)} = 2.5 A
Q_C
= 7 nC
1
2
SMB / DO – 214AA
PIN 1
PIN 2
Applications
 Power Factor Correction (PFC)
 Switched-Mode Power Supply (SMPS)
 Solar Inverters
 Wind Turbine Inverters
 Motor Drives
 Induction Heating
 Uninterruptible Power Supply (UPS)
 High Voltage Multipliers
Maximum Ratings at T_j = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I²t value
Power dissipation
Operating and storage temperature
V_RRM
I_F
I_F(RMS)
I_F,SM
I_F,max
∫i² dt
P_tot
T_j , T_stg
T_C ≤ 160 °C
T_C ≤ 160 °C
T_C = 25 °C, t_P = 10 ms
T_C = 160 °C, t_P = 10 ms
T_C = 25 °C, t_P = 10 µs
T_C = 25 °C, t_P = 10 ms
T_C = 160 °C, t_P = 10 ms
T_C = 25 °C
Values
1200
1
2
10
8
65
0.5
0.3
42
-55 to 175
Electrical Characteristics at T_j = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
V_F
I_F = 1 A, T_j = 25 °C
I_F = 1 A, T_j = 175 °C
I_R
V_R = 1200 V, T_j = 25 °C
V_R = 1200 V, T_j = 175 °C
Q_C
t_s
I_F ≤ I_F,MAX
dI_F/dt = 200 A/μs
T_j = 175 °C
V_R = 400 V
V_R = 960 V
V_R = 400 V
V_R = 960 V
V_R = 1 V, f = 1 MHz, T_j = 25 °C
C
V_R = 400 V, f = 1 MHz, T_j = 25 °C
V_R = 1000 V, f = 1 MHz, T_j = 25 °C
min.
Values
typ.
1.6
2.4
5
10
7
13
< 17
69
10
8
max.
1.8
3.7
10
100
Thermal Characteristics
Thermal resistance, junction - case
R_thJC
3.6
Unit
V
A
A
A
A
A²s
W
°C
Unit
V
µA
nC
ns
pF
°C/W
Aug 2014
http://www.genesicsemi.com/index.php/sic-products/schottky
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