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GB01SHT06-CAU_15 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – High Temperature Silicon Carbide Power Schottky Diode | |||
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Die Datasheet
GB01SHT06-CAU
High Temperature Silicon Carbide
Power Schottky Diode
Features
ï· 650 V Schottky rectifier
ï· 210 °C maximum operating temperature
ï· Zero reverse recovery charge
ï· Superior surge current capability
ï· Positive temperature coefficient of VF
ï· Temperature independent switching behavior
ï· Lowest figure of merit QC/IF
ï· Available screened to Mil-PRF-19500
VRRM
IF @ 25 oC
QC
= 650 V
= 2.5 A
= 7 nC
Die Size = 0.9 mm x 0.9 mm
Advantages
ï· High temperature operation
ï· Improved circuit efficiency (Lower overall cost)
ï· Low switching losses
ï· Ease of paralleling devices without thermal runaway
ï· Smaller heat sink requirements
ï· Industryâs lowest reverse recovery charge
ï· Industryâs lowest device capacitance
ï· Ideal for output switching of power supplies
ï· Best in class reverse leakage current at operating temperature
Applications
ï· Down Hole Oil Drilling
ï· Geothermal Instrumentation
ï· Solenoid Actuators
ï· General Purpose High-Temperature Switching
ï· Amplifiers
ï· Solar Inverters
ï· Switched-Mode Power Supply (SMPS)
ï· Power Factor Correction (PFC)
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF
IF(RMS)
IF,SM
IF,max
â«i2 dt
Ptot
Tj , Tstg
TC = 25 °C, RthJC = 9.52
TC ⤠190 °C, RthJC = 9.52
TC ⤠190 °C, RthJC = 9.52
TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C, RthJC = 9.52
Values
650
2.5
0.75
1.3
10
65
0.5
24
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 0.75 A, Tj = 25 °C
IF = 0.75 A, Tj = 210 °C
IR
VR = 650 V, Tj = 25 °C
VR = 650 V, Tj = 210 °C
QC
ts
IF ⤠IF,MAX
dIF/dt = 200 A/μs
Tj = 210 °C
VR = 400 V
VR = 400 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 650 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.4
2.3
1
5
7
< 17
76
12
12
max.
5
50
Unit
V
A
A
A
A
A
A2S
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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