GAP3SLT33-214 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode

Silicon Carbide Power
Schottky Diode
Features
 3300 V Schottky rectifier
 175 °C maximum operating temperature
 Electrically isolated base-plate
 Positive temperature coefficient of VF
 Fast switching speeds
 Superior figure of merit QC/IF
Advantages
 Improved circuit efficiency (Lower overall cost)
 Significantly reduced switching losses compare to Si PiN
diodes
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
GAP3SLT33-214
Package
 RoHS Compliant
1
V_RRM
= 3300 V
I_{F (Tc = 25°C)} = 0.3 A
Q_C
= 20 nC
PIN 1
PIN 2
2
SMB / DO – 214AA
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 High Voltage Multipliers
 Military Power Supplies
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I²t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF(RMS)
IF,SM
IF,max
∫i² dt
Ptot
Tj , Tstg
TC ≤ 125 °C
TC ≤ 125 °C
TC = 25 °C, tP = 10 ms
TC = 125 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C
Values
3300
0.3
0.35
2
1
10
0.1
25
-55 to 175
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
VF
IR
QC
ts
C
Conditions
IF = 0.3 A, Tj = 25 °C
IF = 0.3 A, Tj = 175 °C
VR = 3300 V, Tj = 25 °C
VR = 3300 V, Tj = 175 °C
IF ≤ IF,MAX
dIF/dt = 35 A/μs
Tj = 175 °C
VR = 1500 V
VR = 1500 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.7
4.0
1
10
20
< 60
42
8
7
max.
2.2
5.0
10
100
Thermal Characteristics
Thermal resistance, junction – Cu lead frame
RthJC
1.42
Unit
V
A
A
A
A
A²S
W
°C
Unit
V
µA
nC
ns
pF
°C/W
Aug 2014
http://www.genesicsemi.com/index.php/sic-products/schottky
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