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GAP3SHT33-CAL_15 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode | |||
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Silicon Carbide Power
Schottky Diode
Features
⢠3300 V Schottky rectifier
⢠210 °C maximum operating temperature
⢠Positive temperature coefficient of VF
⢠Fast switching speeds
⢠Superior figure of merit QC/IF
Die Datasheet
GAP3SHT33-CAL
VRRM
IF @ 25 oC
QC
= 3300 V
= 0.3 A
= 20 nC
Advantages
⢠Improved circuit efficiency (Lower overall cost)
⢠Significantly reduced switching losses compare to Si PiN
diodes
⢠Ease of paralleling devices without thermal runaway
⢠Smaller heat sink requirements
⢠Low reverse recovery current
⢠Low device capacitance
Die Size = 1.39 mm x 1.39 mm
Applications
⢠Down Hole Oil Drilling, Geothermal Instrumentation
⢠High Voltage Multipliers
⢠Military Power Supplies
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF(RMS)
IF,SM
IF,max
â«i2 dt
Ptot
Tj , Tstg
TC ⤠125 °C, RthJC = 1.69
TC ⤠125 °C, RthJC = 1.69
TC = 25 °C, tP = 10 ms
TC = 125 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C, RthJC = 1.69
Values
3300
0.3
0.35
2
1
10
0.1
89
-55 to 210
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
VF
IR
QC
ts
C
Conditions
IF = 0.3 A, Tj = 25 °C
IF = 0.3 A, Tj = 175 °C
VR = 3300 V, Tj = 25 °C
VR = 3300 V, Tj = 175 °C
IF ⤠IF,MAX
dIF/dt = 35 A/μs
Tj = 175 °C
VR = 1500 V
VR = 1500 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.7
4.0
1
10
20
< 60
42
8
7
max.
2.2
5.0
10
100
Unit
V
A
A
A
A
A2S
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 4
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