GAP3SHT33-CAL Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode Chip

Silicon Carbide Power
Schottky Diode Chip
Features
 3300 V Schottky rectifier
 175 °C maximum operating temperature
 Electrically isolated base-plate
 Positive temperature coefficient of VF
 Fast switching speeds
 Superior figure of merit QC/IF
Die Datasheet
GAP3SHT33-CAL
V_RRM
V_F
I_F
Q_C
= 3300 V
= 1.7 V
= 0.3 A
= 20 nC
Advantages
 Improved circuit efficiency (Lower overall cost)
 Significantly reduced switching losses compare to Si PiN
diodes
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 High Voltage Multipliers
 Military Power Supplies
Electrical Specifications
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I²t value
Power dissipation
Operating and storage temperature
Electrical Characteristics
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
VRRM
IF
IF(RMS)
IF,SM
IF,max
∫i² dt
Ptot
Tj , Tstg
Conditions
TVJ < 175 °C
TC ≤ 125 °C
TC = 25 °C, tP = 10 ms
TC = 125 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C
Values
3300
0.3
0.35
tbd
tbd
tbd
tbd
25
-55 to 175
Symbol
VF
IR
QC
ts
C
Conditions
IF = 0.3 A, Tj = 25 °C
IF = 0.3 A, Tj = 175 °C
VR = 3300 V, Tj = 25 °C
VR = 3300 V, Tj = 175 °C
IF ≤ IF,MAX
dIF/dt = 35 A/μs
Tj = 175 °C
VR = 1500 V
VR = 1500 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.7
3.9
1.3
14
20
< 60
42
8
7
max.
5
20
Unit
V
A
A
A
A
A²S
W
°C
Unit
V
µA
nC
ns
pF
Dec 2014
http://www.genesicsemi.com/index.php/hit-sic/baredie
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