GAP05SLT80-CAL_15 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode

Silicon Carbide Power
Schottky Diode
Features
 8000 V Silicon Carbide Schottky rectifier
 175 °C maximum operating temperature
 Positive temperature coefficient of VF
 Extremely fast switching speeds
 Superior figure of merit QC/IF
Advantages
 Improved circuit efficiency (Lower overall cost)
 Low switching losses
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
 Low reverse leakage current at operating temperature
Die Datasheet
GAP05SLT80-CAL
V_RRM
I_F
Q_C
= 8000 V
= 50 mA
= 8 nC
Die Size = 2.4 mm x 2.4 mm
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 High Voltage Multipliers
 Military Power Supplies
Electrical Specifications
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Power dissipation
Operating and storage temperature
Electrical Characteristics
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Total capacitance
Symbol
VRRM
IF
IF(RMS)
Ptot
Tj , Tstg
Conditions
TC = 25 °C
Values
Unit
8000
V
50
mA
87
mA
0.2
W
-55 to 175
°C
Symbol
VF
IR
QC
C
Conditions
IF = 50 mA, Tj = 25 °C
IF = 50 mA, Tj = 175 °C
VR = 8000 V, Tj = 25 °C
VR = 8000 V, Tj = 125 °C
VR = 1000 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
4.6
12
3.8
5.3
8
25
8
6
max.
Unit
V
µA
nC
pF
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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