GAP05SLT80-CAL Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode Chip

Silicon Carbide Power
Schottky Diode Chip
Features
 8000 V Silicon Carbide Schottky rectifier
 175 °C maximum operating temperature
 Positive temperature coefficient of V_F
 Extremely fast switching speeds
 Superior figure of merit Q_C/I_F
Electrical Datasheet*
GAP05SLT80-CAL
Advantages
 Improved circuit efficiency (Lower overall cost)
 Low switching losses
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
 Low reverse leakage current at operating temperature
Maximum Ratings at T_j = 175 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Power dissipation
Operating and storage temperature
V_RRM
I_F
I_F(RMS)
P_tot
T_j , T_stg
Conditions
T_C = 25 °C
Values
Unit
8000
V
50
mA
87
mA
0.2
W
-55 to 175
°C
Electrical Characteristics at T_j = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitance
V_F
I_F = 50 mA, T_j = 25 °C
I_F = 50 mA, T_j = 175 °C
I_R
V_R = 8000 V, T_j = 25 °C
V_R = 8000 V, T_j = 125 °C
V_R = 1 V, f = 1 MHz, T_j = 25 °C
C
V_R = 400 V, f = 1 MHz, T_j = 25 °C
V_R = 1000 V, f = 1 MHz, T_j = 25 °C
min.
Values
typ.
4.6
12
3.8
5.3
25
8
6
max.
Unit
V
µA
pF
*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC
Semiconductor).
Mar 2013
http://www.genesicsemi.com/index.php/hit-sic/baredie
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