GAP05SLT80-220 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

Silicon Carbide Power
Schottky Diode
Features
 8000 V Silicon Carbide Schottky rectifier
 175 °C maximum operating temperature
 Positive temperature coefficient of V_F
 Extremely fast switching speeds
 Superior figure of merit Q_C/I_F
GAP05SLT80-220
V_RRM
V_F
I_F
Q_C
= 8000 V
= 4.6 V
= 50 mA
= 8 nC
A
K
Advantages
 Improved circuit efficiency (Lower overall cost)
 Low switching losses
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
 Low reverse leakage current at operating temperature
Electrical Specifications
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Power dissipation
Operating and storage temperature
Electrical Characteristics
Parameter
Diode forward voltage
Reverse current
Total capacitance
Symbol
V_RRM
I_F
I_F(RMS)
P_tot
T_j , T_stg
Conditions
T_C = 25 °C
Values
Unit
8000
V
50
mA
87
mA
0.2
W
-55 to 175
°C
Symbol
V_F
I_R
C
Conditions
I_F = 50 mA, T_j = 25 °C
I_F = 50 mA, T_j = 175 °C
V_R = 8000 V, T_j = 25 °C
V_R = 8000 V, T_j = 125 °C
V_R = 1 V, f = 1 MHz, T_j = 25 °C
V_R = 400 V, f = 1 MHz, T_j = 25 °C
V_R = 1000 V, f = 1 MHz, T_j = 25 °C
min.
Values
typ.
4.6
12
3.8
5.3
25
8
6
max.
Unit
V
µA
pF
Sep 2014
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers
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