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GA50JT17-CAL_16 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor | |||
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Die Datasheet
GA50JT17-CAL
Normally â OFF Silicon Carbide
Junction Transistor
Features
ï· 210 °C Maximum Operating Temperature
ï· Gate Oxide Free SiC Switch
ï· Exceptional Safe Operating Area
ï· Excellent Gain Linearity
ï· Temperature Independent Switching Performance
ï· Low Output Capacitance
ï· Positive Temperature Coefficient of RDS,ON
ï· Suitable for Connecting an Anti-parallel Diode
VDS
= 1700 V
RDS(ON)
= 20 mΩ
ID @ 25 oC = 100 A
hFE
= 85
Die Size = 4.35 mm x 4.35 mm
Advantages
ï· Compatible with Si MOSFET/IGBT Gate Drive ICs
ï· > 20 µs Short-Circuit Withstand Capability
ï· Lowest-in-class Conduction Losses
ï· High Circuit Efficiency
ï· Minimal Input Signal Distortion
ï· High Amplifier Bandwidth
Applications
ï· Down Hole Oil Drilling, Geothermal Instrumentation
ï· Hybrid Electric Vehicles (HEV)
ï· Solar Inverters
ï· Switched-Mode Power Supply (SMPS)
ï· Power Factor Correction (PFC)
ï· Induction Heating
ï· Uninterruptible Power Supply (UPS)
ï· Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA50JT17-CAL ...........................................................................................................6
Section VI: Mechanical Parameters ............................................................................................................. 10
Section VII: Chip Dimensions ....................................................................................................................... 10
Section VIII: SPICE Model Parameters ........................................................................................................ 12
Section I: Absolute Maximum Ratings
(TC = 25 oC unless otherwise specified)
Parameter
Symbol
Conditions
Drain â Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
VDS
ID
ID
IG
RBSOA
SCSOA
VGS = 0 V
TC = 25°C
TC > 125°C, assumes RthJC < 0.26 oC/W
TVJ = 210 oC,
Clamped Inductive Load
TVJ = 210 oC, IG = 1 A, VDS = 1200 V,
Non Repetitive
Reverse Gate â Source Voltage
Reverse Drain â Source Voltage
Operating Junction and Storage
Temperature
VSG
VSD
Tj, Tstg
Maximum Processing Temperature
TProc
10 min. maximum
Value
1700
100
50
3.5
ID,max = 50
@ VDS ⤠VDSmax
>20
30
25
-55 to 210
325
Unit Notes
V
A
A
A
A
Fig. 16
µs
V
V
°C
°C
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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