GA50JT12-247 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

Normally – OFF Silicon Carbide
Junction Transistor
Features
 175 °C Maximum Operating Temperature
 Gate Oxide Free SiC Switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Coefficient of RDS,ON
 Suitable for Connecting an Anti-parallel Diode
Advantages
 Compatible with Si MOSFET/IGBT Gate Drive ICs
 > 20 µs Short-Circuit Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
Package
 RoHS Compliant
D
GA50JT12-247
V_DS
=
R_DS(ON)
=
I_{D (Tc = 25°C)}
=
I_{D (Tc > 125°C)}
=
h_{FE (Tc = 25°C)} =
1200 V
25 mΩ
100 A
50 A
104
D
G ^DS
TO-247
G
S
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA50JT12-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 145°C
Conditions
TVJ = 175 ^oC,
Clamped Inductive Load
TVJ = 175 ^oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 145 °C, tp > 100 ms
Value
1200
100
50
3.5
ID,max = 50
@ VDS ≤ VDSmax
>20
30
25
583 / 116
-55 to 175
Unit Notes
V
A
Fig. 17
A
Fig. 17
A
A
Fig. 19
µs
V
V
W Fig. 16
°C
Dec 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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