GA50JT06-CAL_15 Datasheet, PDF (1/10 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

Die Datasheet
GA50JT06-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
• 210°C maximum operating temperature
• Gate Oxide Free SiC switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Co-efficient of RDS,ON
• Suitable for connecting an anti-parallel diode
V_DS
=
R_DS(ON)
=
I_D @ 25 ^oC =
h_FE
=
600 V
25 mΩ
100 A
105
Die Size = 4.35 mm x 4.35 mm
Advantages
• Compatible with Si MOSFET/IGBT gate-drivers
• > 20 µs Short-Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Absolute Maximum Ratings (T_C = 25 ^oC unless otherwise specified)
Parameter
Symbol
Conditions
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
VDS
ID
ID
IGM
RBSOA
SCSOA
VGS = 0 V
TC = 25°C
TC > 125°C, assumes RthJC < 0.26 ^oC/W
TVJ = 210 ^oC,
Clamped Inductive Load
TVJ = 210 ^oC, IG = 1 A, VDS = 400 V,
Non Repetitive
Reverse Gate – Source Voltage
VGS
Reverse Drain – Source Voltage
VDS
Operating Junction and Storage Temperature
Tj, Tstg
Maximum Processing Temperature
TProc
10 min. maximum
Values
600
100
50
3.5
ID,max = 50
@ VDS ≤ VDSmax
20
30
25
-55 to 210
325
Unit
V
A
A
A
A
µs
V
V
°C
°C
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
On Characteristics
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
Off Characteristics
Drain Leakage Current
Gate – Source Leakage Current
ID = 50 A, IG = 1000 mA, Tj = 25 °C
25
RDS(ON)
ID = 50 A, IG = 1000 mA, Tj = 125 °C
ID = 50 A, IG = 2000 mA, Tj = 175 °C
39
43
mΩ
ID = 50 A, IG = 2000 mA, Tj = 210 °C
62
VGS,SAT
ID = 50 A, ID/IG = 40, Tj = 25 °C
ID = 50 A, ID/IG = 30, Tj = 175 °C
3.42
3.23
V
VDS = 5 V, ID = 50 A, Tj = 25 °C
105
β
VDS = 5 V, ID = 50 A, Tj = 125 °C
VDS = 5 V, ID = 50 A, Tj = 175 °C
77
71
VDS = 5 V, ID = 50 A, Tj = 210 °C
69
IDSS
VR = 600 V, VGS = 0 V, Tj = 25 °C
VR = 600 V, VGS = 0 V, Tj = 210 °C
10
100
µA
IGSS
VGS = -20 V, Tj = 25 °C
20
nA
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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