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GA50JT06-258 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor | |||
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GA50JT06-258
Normally â OFF Silicon Carbide
Junction Transistor
Features
ï· 225°C maximum operating temperature
ï· Gate Oxide Free SiC Switch
ï· Exceptional Safe Operating Area
ï· Excellent Gain Linearity
ï· Temperature Independent Switching Performance
ï· Low Output Capacitance
ï· Positive Temperature Coefficient of RDS,ON
ï· Suitable for Connecting an Anti-parallel Diode
Package
D
TO-258
VDS
=
RDS(ON)
=
ID (Tc = 25°C) =
hFE (Tc = 25°C) =
600 V
25 mΩ
100 A
105
D
G
S
D
G
S
Advantages
ï· Compatible with Si MOSFET/IGBT Gate Drive ICs
ï· > 20 µs Short-Circuit Withstand Capability
ï· Lowest-in-class Conduction Losses
ï· High Circuit Efficiency
ï· Minimal Input Signal Distortion
ï· High Amplifier Bandwidth
Applications
ï· Down Hole Oil Drilling
ï· Geothermal Instrumentation
ï· Solenoid Actuators
ï· General Purpose High-Temperature Switching
ï· Amplifiers
ï· Solar Inverters
ï· Switched-Mode Power Supply (SMPS)
ï· Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA50JT06-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 10
Section VII: SPICE Model Parameters ......................................................................................................... 11
Section I: Absolute Maximum Ratings
Parameter
Drain â Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate â Source Voltage
Reverse Drain â Source Voltage
Power Dissipation
Operating and Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TJ = 225°C, IG = 3.5 A,
Clamped Inductive Load
TJ = 225°C, IG = 3.5 A, VDS = 400 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Value
600
100
3.5
ID,max = 50
@ VDS ⤠VDSmax
>20
30
25
769
-55 to 225
Unit Notes
V
A
Fig. 21
A
A
Fig. 19
µs
V
V
W Fig. 16
°C
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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