GA35XCP12-247 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – IGBT/SiC Diode Co-pack

IGBT/SiC Diode Co-pack
Features
• Optimal Punch Through (OPT) technology
• SiC freewheeling diode
• Positive temperature coefficient for easy paralleling
• Extremely fast switching speeds
• Temperature independent switching behavior of SiC rectifier
• Best RBSOA/SCSOA capability in the industry
• High junction temperature
• Industry standard packaging
Package
• RoHS Compliant
GA35XCP12-247
V_CES
= 1200 V
I_CM
= 35 A
V_{CE(SAT) = 3.0 V}
2
1
Advantages
• Industry's highest switching speeds
• High temperature operation
• Improved circuit efficiency
• Low switching losses
1
2
3
3
TO – 247AB
Applications
• Solar Inverters
• Aerospace Actuators
• Server Power Supplies
• Resonant Inverters > 100 kHz
• Inductive Heating
• Electronic Welders
Maximum Ratings, at T_j = 150 °C, unless otherwise specified
Parameter
Symbol
Conditions
IGBT
Collector-Emitter Voltage
DC-Collector Current
Gate Emitter Peak Voltage
Operating Temperature
Storage Temperature
Free-wheeling diode
DC-Forward Current
Non Repetitive Peak Forward Current
Surge Non Repetitive Forward Current
V_CES
I_CM
V_GES
T_vj
T_stg
I_F
I_FM
I_F,SM
T_c ≤ 105 ºC
T_c ≤ 105 ºC
T_c = 25 ºC, t_P = 10 μs
t_P = 10 ms, half sine, T_c = 25 ºC
Thermal Characteristics
Th. Resistance Junction to Case
Th. Resistance Junction to Case
R_thJC
R_thJC
IGBT
SiC diode
Mechanical Properties
Mounting Torque
M_d
Values
Unit
1200
V
35
A
± 20
V
-40 to +150
ºC
-40 to +150
ºC
35
A
tbd
A
tbd
A
0.34
K/W
0.31
K/W
Values
min. typ. max.
1.5
2
Nm
January 2011
http://www.genesicsemi.com/index.php/sic-products/copack
Preliminary Datasheet
http://www.genesicsemi.com
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