GA20JT12-263_15 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

GA20JT12-263
Normally – OFF Silicon Carbide
Junction Transistor
Features
• 175 °C Maximum Operating Temperature
• Gate Oxide Free SiC Switch
• Optional Gate Return Pin
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Coefficient of RDS,ON
• Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
Package
V_DS
R_DS(ON)
I_{D (@ 25°C)}
I_{D (@ 145°C)}
h_{FE (@ 25°C)}
= 1200 V
= 50 mΩ
= 45 A
= 20 A
= 80
Drain
TAB
Drain
(TAB)
Gate
(Pin 1)
1G2GR3S4S5S6S7S
Gate Return
(Pin 2)
Source
(Pin 3, 4, 5, 6, 7)
7L D2PAK (TO-263-7L) Please note: The Source and Gate Return pins
are not exchangeable. Their exchange might
Applications
lead to malfunction.
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA20JT12-263.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Continuous Gate Return Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
IGR
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TC = 25°C
TC = 145°C
TVJ = 175 ^oC,
Clamped Inductive Load
TVJ = 175 ^oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 145 °C, tp > 100 ms
Value
1200
45
20
1.3
1.3
ID,max = 20
@ VDS ≤ VDSmax
>20
30
25
282 / 56
-55 to 175
Unit Notes
V
A
Fig. 17
A
Fig. 17
A
A
A
Fig. 19
µs
V
V
W Fig. 16
°C
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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