GA20JT06-CAL_15 Datasheet, PDF (1/10 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Junction Transistor

Die Datasheet
GA20JT06-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
• 210°C maximum operating temperature
• Gate Oxide Free SiC switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Co-efficient of R_DS,ON
• Suitable for connecting an anti-parallel diode
V_DS
=
R_DS(ON)
=
I_D @ 25 ^oC =
h_FE
=
600 V
65 mΩ
45 A
110
Die Size = 2.85 mm x 2.85 mm
Advantages
• Compatible with Si MOSFET/IGBT gate-drivers
• > 20 µs Short-Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Absolute Maximum Ratings (T_C = 25 ^oC unless otherwise specified)
Parameter
Symbol
Conditions
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
V_DS
I_D
I_D
I_GM
RBSOA
SCSOA
V_GS = 0 V
T_C = 25 °C
T_C > 125°C, assumes R_thJC < 0.53 ^oC/W
T_VJ = 210 ^oC,
Clamped Inductive Load
T_VJ = 210 ^oC, I_G = 1 A, V_DS = 400 V,
Non Repetitive
Reverse Gate – Source Voltage
V_GS
Reverse Drain – Source Voltage
V_DS
Operating Junction and Storage Temperature
T_j, T_stg
Maximum Processing Temperature
T_Proc
10 min. maximum
Values
600
45
20
1.3
I_D,max = 20
@ V_DS ≤ V_DSmax
20
30
40
-55 to 210
325
Unit
V
A
A
A
A
µs
V
V
°C
°C
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
On Characteristics
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
Off Characteristics
Drain Leakage Current
Gate – Source Leakage Current
I_D = 20 A, I_G = 400 mA, T_j = 25 °C
65
R_DS(ON)
I_D = 20 A, I_G = 500 mA, T_j = 125 °C
I_D = 20 A, I_G = 1000 mA, T_j = 175 °C
90
110
mΩ
I_D = 20 A, I_G = 1000 mA, T_j = 210 °C
140
V_GS,SAT
D ^{= 20 A, I}D^/IG ^{= 40, T}j ^{= 25 °C}
I_D = 20 A, I_D/I_G = 30, T_j = 175 °C
3.44
3.24
V
V_DS = 5 V, I_D = 20 A, T_j = 25 °C
h_FE
V_DS = 5 V, I_D = 20 A, T_j = 125 °C
V_DS = 5 V, I_D = 20 A, T_j = 175 °C
V_DS = 5 V, I_D = 20 A, T_j = 210 °C
110
78
73
71
I_DSS
V_R = 600 V, V_GS = 0 V, T_j = 25 °C
V_R = 600 V, V_GS = 0 V, T_j = 210 °C
10
100
µA
I_GSS
V_GS = -20 V, T_j = 25 °C
20
nA
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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