GA10SICP12-247_15 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Junction Transistor/Schottky Diode Co-Pack

GA10SICP12-247
Silicon Carbide Junction
Transistor/Schottky Diode Co-Pack
Features
• 175 °C Maximum Operating Temperature
• Gate Oxide Free SiC Switch
• Exceptional Safe Operating Area
• Integrated SiC Schottky Rectifier
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Coefficient of R_DS,ON
• Suitable for Connecting an Anti-parallel Diode
Package
D
V_DS
R_DS(ON)
I_{D (@ 25°C)}
I_{D (@ 150°C)}
h_{FE (@ 25°C)}
= 1200 V
= 100 mΩ
= 25 A
= 10 A
= 100
D
G
GDS
S
TO-247AB
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
• Reduced cooling requirements
• Reduced system size
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 4
Section V: Driving the GA10SICP12-247 ....................................................................................................... 7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
SiC Junction Transistor
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and storage temperature
Symbol
Conditions
V_DS
I_D
I_D
I_G
RBSOA
SCSOA
V_SG
V_SD
P_tot
T_stg
V_GS = 0 V
T_C = 25°C
T_C = 150°C
T_VJ = 175 ^oC,
Clamped Inductive Load
T_VJ = 175 ^oC, I_G = 1 A, V_DS = 800 V,
Non Repetitive
T_C = 25 °C / 150 °C, t_p > 100 ms
Value
1200
25
10
1.3
I_D,max = 10
@ V_DS ≤ V_DSmax
>20
30
25
170 / 22
-55 to 175
Unit Notes
V
A
Fig. 11
A
Fig. 11
A
A
Fig. 13
µs
V
V
W Fig. 10
°C
Jun 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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