GA10SICP12-247 Datasheet, PDF (1/9 Pages) GeneSiC Semiconductor, Inc. – Transistor/Schottky Diode Co-pack

Silicon Carbide Junction
Transistor/Schottky Diode Co-pack
Features
 175°C Maximum Operating Temperature
 Gate Oxide free SiC switch
 Exceptional Safe Operating Area
 Integrated SiC Schottky Rectifier
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low output capacitance
 Positive temperature co-efficient of R_DS,ON
 Suitable for connecting an anti-parallel diode
Advantages
 Compatible with Si MOSFET/IGBT Gate Drive ICs
 > 20 µs Short-Circuit Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal distortion
 High Amplifier Bandwidth
 Reduced cooling requirements
 Reduced system size
Package
 RoHS Compliant
D
GA10SICP12-247
V_DS
=
R_DS(ON)
=
I_{D (Tc = 25°C)} =
h_{FE (Tc = 25°C)}
1200 V
120 mΩ
25 A
100
GDS
TO-247AB
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Maximum Ratings at T_j = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
SiC Junction Transistor
Drain – Source Voltage
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
V_DS
I_D
I_GM
RBSOA
SCSOA
V_SG
V_SD
P_tot
T_stg
V_GS = 0 V
T_C,MAX = 95 °C
T_VJ = 175 ^oC, I_G = 1 A,
Clamped Inductive Load
T_VJ = 175 ^oC, I_G = 1 A, V_DS = 800 V,
Non Repetitive
T_C = 95 °C
Free-wheeling Silicon Carbide diode
DC-Forward Current
I_F
Non Repetitive Peak Forward Current
I_FM
Surge Non Repetitive Forward Current
I_F,SM
T_C ≤ 150 ºC
T_C = 25 ºC, tP = 10 μs
tP = 10 ms, half sine, T_C = 25 ºC
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - case
R_thJC
R_thJC
SiC Junction Transistor
SiC Diode
Mechanical Properties
Mounting torque
M
Values
1200
10
10
I_D,max = 10
@ V_DS ≤ V_DSmax
20
30
25
91
-55 to 175
10
280
65
0.88
0.85
0.6
Unit
V
A
A
A
µs
V
V
W
°C
A
A
A
°C/W
°C/W
Nm
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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