GA10JT12-CAL_16 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

Die Datasheet
GA10JT12-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
 210 °C Maximum Operating Temperature
 Gate Oxide Free SiC Switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Coefficient of RDS,ON
 Suitable for Connecting an Anti-parallel Diode
V_DS
= 1200 V
R_DS(ON)
= 100 mΩ
I_D @ 25 ^oC = 25 A
h_FE
= 80
Die Size = 2.10 mm x 2.10 mm
Advantages
 Compatible with Si MOSFET/IGBT Gate Drive ICs
 > 20 µs Short-Circuit Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA10JT12-CAL ...........................................................................................................6
Section VI: Mechanical Parameters ............................................................................................................. 10
Section VII: Chip Dimensions ....................................................................................................................... 10
Section VIII: SPICE Model Parameters ........................................................................................................ 12
Section I: Absolute Maximum Ratings
(T_C = 25 ^oC unless otherwise specified)
Parameter
Symbol
Conditions
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
VDS
ID
ID
IG
RBSOA
SCSOA
VGS = 0 V
TC = 25°C
TC > 125°C, assumes RthJC < 0.88 ^oC/W
TVJ = 210 ^oC,
Clamped Inductive Load
TVJ = 210 ^oC, IG = 1 A, VDS = 800 V,
Non Repetitive
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Operating Junction and Storage
Temperature
VSG
VSD
Tj, Tstg
Maximum Processing Temperature
TProc
10 min. maximum
Value
1200
25
10
1.3
ID,max = 10
@ VDS ≤ VDSmax
>20
30
25
-55 to 210
325
Unit Notes
V
A
A
A
A
Fig. 16
µs
V
V
°C
°C
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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