GA10JT12-247 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

Normally – OFF Silicon Carbide
Junction Transistor
Features
 175 °C Maximum Operating Temperature
 Gate Oxide Free SiC Switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Coefficient of R_DS,ON
 Suitable for Connecting an Anti-parallel Diode
Advantages
 Compatible with Si MOSFET/IGBT Gate Drive ICs
 > 20 µs Short-Circuit Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
Package
 RoHS Compliant
D
GA10JT12-247
V_DS
=
R_DS(ON)
=
I_{D (Tc = 25°C)}
=
I_{D (Tc > 125°C)} =
h_{FE (Tc = 25°C)} =
1200 V
120 mΩ
25 A
10 A
80
D
G ^DS
TO-247
G
S
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 3
Section V: Driving the GA10JT12-247 ........................................................................................................... 7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
V_DS
I_D
I_D
I_G
RBSOA
SCSOA
V_SG
V_SD
P_tot
T_stg
V_GS = 0 V
T_C = 25°C
T_C = 155°C
Conditions
T_VJ = 175 ^oC,
Clamped Inductive Load
T_VJ = 175 ^oC, I_G = 1 A, V_DS = 800 V,
Non Repetitive
T_C = 25 °C / 155 °C, t_p > 100 ms
Value
1200
25
10
1.3
I_D,max = 10
@ V_DS ≤ V_DSmax
>20
30
25
170 / 22
-55 to 175
Unit Notes
V
A
Fig. 17
A
Fig. 17
A
A
Fig. 19
µs
V
V
W
Fig. 16
°C
Nov 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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