GA10JT06-CAL Datasheet, PDF (1/6 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

Normally – OFF Silicon Carbide
Junction Transistor
Die Datasheet
Features
 250°C maximum operating temperature
 Gate Oxide Free SiC switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Co-efficient of R_DS,ON
 Suitable for connecting an anti-parallel diode
GA10JT06-CAL
V_DS
=
R_DS(ON)
=
I_{D (Tc = 25°C)} =
h_{FE(Tc = 25°C)} =
600 V
120 mΩ
25 A
120
D
G
S
Advantages
 Compatible with Si MOSFET/IGBT gate-drivers
 > 20 µs Short-Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Storage Temperature
Symbol
V_DS
I_D
I_GM
RBSOA
SCSOA
V_SG
V_SD
T_stg
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Conditions
V_GS = 0 V
T_C = 25°C
T_VJ = 250 ^oC, I_G = 1 A,
Clamped Inductive Load
T_VJ = 225 ^oC, I_G = 2.5 A, V_DS = 400 V,
Non Repetitive
Value
600
25
3
I_D,max = 10
@ V_DS ≤ V_DSmax
> 20
30
25
-55 to 250
Unit Notes
V
A
A
A
µs
V
V
°C
Electrical Characteristics
Parameter
On State Characteristics
Drain – Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
R_DS(ON)
V_GS(FWD)
β
I_DSS
I_SG
Conditions
Min.
Value
Typical
Max. ^Unit
Notes
I_D = 10 A, T_j = 25 °C
I_D = 10 A, T_j = 125 °C
I_D = 10 A, T_j = 175 °C
I_D = 10 A, T_j = 225 °C
I_G = 500 mA, T_j = 25 °C
I_G = 500 mA, T_j = 225 °C
V_DS = 5 V, I_D = 10 A, T_j = 25 °C
V_DS = 5 V, I_D = 10 A, T_j = 125 °C
V_DS = 5 V, I_D = 10 A, T_j = 175 °C
V_DS = 10 V, I_D = 10 A, T_j = 225 °C
120
180
240
mΩ
Fig. 5
320
2.95
2.63
V
Fig. 4
123
87
80
–
Fig. 5
76
V_R = 600 V, V_GS = 0 V, T_j = 25 °C
V_R = 600 V, V_GS = 0 V, T_j = 125 °C
V_R = 600 V, V_GS = 0 V, T_j = 225 °C
V_SG = 20 V, T_j = 25 °C
10
50
μA
Fig. 6
100
20
nA
August 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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