|
GA100SICP12-227_15 Datasheet, PDF (1/13 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Junction Transistor/Schottky Diode Co-pack | |||
|
GA100SICP12-227
Silicon Carbide Junction
Transistor/Schottky Diode Co-pack
Features
⢠175 °C Maximum Operating Temperature
⢠Gate Oxide Free SiC Switch
⢠Optional Gate Return Pin
⢠Exceptional Safe Operating Area
⢠Integrated SiC Schottky Rectifier
⢠Excellent Gain Linearity
⢠Temperature Independent Switching Performance
⢠Low Output Capacitance
⢠Positive Temperature Coefficient of RDS,ON
⢠Suitable for Connecting an Anti-parallel Diode
Advantages
⢠Compatible with Si MOSFET/IGBT Gate Drive ICs
⢠> 20 µs Short-Circuit Withstand Capability
⢠Lowest-in-class Conduction Losses
⢠High Circuit Efficiency
⢠Minimal Input Signal Distortion
⢠High Amplifier Bandwidth
⢠Reduced cooling requirements
⢠Reduced system size
VDS
= 1200 V
RDS(ON)
= 10 mΩ
ID (@ 25°C)
= 160 A
ID (@ 115°C)
= 100 A
Package
hFE (@ 25°C)
= 85
⢠RoHS Compliant
G
GR
D
S
Isolated Baseplate
SOT-227
Applications
D
G
Pin D - Drain
Pin S - Source
GR
Pin GR - Gate Return
S
Pin G - Gate
Please note: The Source and Gate Return
pins are not exchangeable. Their exchange
might lead to malfunction.
⢠Down Hole Oil Drilling, Geothermal Instrumentation
⢠Hybrid Electric Vehicles (HEV)
⢠Solar Inverters
⢠Switched-Mode Power Supply (SMPS)
⢠Power Factor Correction (PFC)
⢠Induction Heating
⢠Uninterruptible Power Supply (UPS)
⢠Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 4
Section V: Driving the GA100SICP12-227 ..................................................................................................... 8
Section VI: Package Dimensions ................................................................................................................. 12
Section VII: SPICE Model Parameters ......................................................................................................... 14
Section I: Absolute Maximum Ratings
Parameter
SiC Junction Transistor
Drain â Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Continuous Gate Return Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate â Source Voltage
Reverse Drain â Source Voltage
Power Dissipation
Operating and storage temperature
Symbol
Conditions
VDS
ID
ID
IG
IGR
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 115°C
TVJ = 175 oC,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 115 °C, tp > 100 ms
Value
1200
160
100
7
7
ID,max = 100
@ VDS ⤠VDSmax
>20
30
25
535 / 214
-55 to 175
Unit Notes
V
A
Fig. 17
A
Fig. 17
A
A
Fig. 19
µs
V
V
W Fig. 16
°C
Dec 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
Pg 1 of 13
|
▷ |