GA100JT17-227_15 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

GA100JT17-227
Normally – OFF Silicon Carbide
Junction Transistor
Features
• 175 °C Maximum Operating Temperature
• Gate Oxide Free SiC Switch
• Optional Gate Return Pin
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Coefficient of R_DS,ON
• Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
• Reduced cooling requirements
• Reduced system size
Package
V_DS
=
R_DS(ON)
=
I_{D (Tc = 25°C)}
=
I_{D (Tc = 115°C)}
=
h_{FE (Tc = 25°C)} =
1700 V
10 mΩ
160 A
100 A
100
G
D
GR
D
S
Isolated Baseplate
SOT-227
G
Pin D - Drain
Pin S - Source
GR
Pin GR - Gate Return
S _{Pin G - Gate}
Please note: The Source and Gate Return
pins are not exchangeable. Their exchange
might lead to malfunction.
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 3
Section V: Driving the GA100JT17-227 ......................................................................................................... 7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Continuous Gate Return Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and storage temperature
Symbol
V_DS
I_D
I_D
I_G
I_GR
RBSOA
SCSOA
V_SG
V_SD
P_tot
T_stg
Conditions
V_GS = 0 V
T_C = 25°C
T_C = 115°C
T_VJ = 175 ^oC,
Clamped Inductive Load
T_VJ = 175 ^oC, I_G = 1 A, V_DS = 800 V,
Non Repetitive
T_C = 25 °C / 115 °C, t_p > 100 ms
Value
1700
160
100
7
7
I_D,max = 100
@ V_DS ≤ V_DSmax
>20
30
25
535 / 214
-55 to 175
Unit Notes
V
A
Fig. 17
A
Fig. 17
A
A
A
Fig. 19
µs
V
V
W Fig. 16
°C
Dec 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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