GA060TH65-227SP Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Thyristor

Silicon Carbide Thyristor
Features
• 6500 V Asymmetric SiC NPNP Thyristor
• 150 °C operating temperature
• Robust compact fully soldered package
• SOT-227 (ISOTOP) base plate form factor
• Fast turn on characteristics
• Lowest in class Q_rr/I_T(AVM)
Applications
• Grid Tied Solar Inverters
• Wind Power Inverters
• HVDC Power Conversion
• Utility Scale Power Conversion
• Trigger Circuits/Ignition Circuits
Maximum Ratings
Parameter
Repetitive peak forward voltage
Repetitive peak reverse voltage
Maximum average on-state current
RMS on-state current
Non-repetitive peak on-state current
Power dissipation
Operating and storage temperature
Electrical Characteristics
Parameter
Maximum peak on state voltage
Anode-cathode threshold voltage
Anode-cathode slope resistance
Leakage current
Gate trigger current
Holding current
Rise time
Delay time
Reverse recovery charge
Recovered charge, 50% chord
Reverse recovery current
Circuit commutated turn-off time
Thermal Characteristics
Thermal resistance, junction - case
Mechanical Properties
Mounting torque for base
Mounting torque for top
Weight
1. Considering worst case Z_th conditions
Package
GA060TH65
V_FBM
I_T(AVM)
Q_rr
= 6500 V
= 60 A
= 2.95 µC
Symbol
V_FBM
V_RBM
I_T(AVM)
I_T(RMS)
I_T,max
P_tot
T_j, T_stg
Conditions
T_j = 25 °C
T_j = 25 °C
T_C ≤ 120 °C
T_C ≤ 120 °C
T_C= 25 °C, t_p = 2 us, D = 0.1
T_C= 25 °C
Values
Unit
6500
V
50
V
60
A
104
A
tbd
A
919
W
-55 to 150
°C
Symbol
V_KA(ON)
V_KA(TO)
R_AK
I_L
I
GT
I_H
t_R
t_D
Q_rr
Q_ra
I_rm
t_q
Conditions
I_K = -60 A, T_j = 25 °C
I_K = -60 A, T_j = 150 °C
T_j = 25 °C (150 °C)
T_j = 25 °C (150 °C), I_K = -60 A
V_KA = -6500 V, V_GA = 0 V, T_j = 25 °C
V_KA = -6500 V, V_GA = 0 V, T_j = 150 °C
T_j = 25 °C, t_P = 10 µs
T_j = 25 °C
I_G = -3 A, V_KA = -2200 V
I_K = -60 A, T_j = 25 °C
dI/dt = 360 A/us, I_K = -60 A, V_KA = 20 V
dV/dt(re-app) = -362 V/us, T_j = 25 °C
Values
Unit
min. typ. max.
-3.90
-3.70
V
-3.1(-2.8)
V
9.4(9.5)
mΩ
20
50
µA
-100
mA
tbd
mA
170
ns
45
ns
2.95
µC
1.6
µC
15
A
6.7
µs
R_thJC
0.136
°C/W
M_b
Heat sink surface must be optically flat
1.5
Nm
M_t
1.3
Nm
W_t
30
g
November 2010
http://www.genesicsemi.com/index.php/sic-products/thyristors
Preliminary Datasheet
http://www.genesicsemi.com
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