GA05JT12-CAL Datasheet, PDF (1/8 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

GA05JT12-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
 250 °C Maximum Operating Temperature
 Gate Oxide Free SiC Switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Coefficient of R_DS,ON
 Suitable for Connecting an Anti-parallel Diode
Advantages
 Compatible with Si MOSFET/IGBT Gate Drive ICs
 > 20 µs Short-Circuit Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
Package
V_DS
=
R_DS(ON)
=
I_{D (Tc = 25°C)}
=
h_{FE (Tc = 25°C)} =
1200 V
210 mΩ
15 A
80
D
G
S
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 3
Section V: GA05JT12-CAL Gate Drive Theory of Operation ....................................................................... 5
Section VI: Mechanical Parameters ............................................................................................................... 6
Section VII: Chip Dimensions ......................................................................................................................... 6
Section VIII: SPICE Model Parameters .......................................................................................................... 8
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
V_DS
I_D
I_D
I_G
RBSOA
SCSOA
V_SG
V_SD
P_tot
T_stg
V_GS = 0 V
T_C = 25°C
T_C = 160°C
Conditions
T_VJ = 250 ^oC,
Clamped Inductive Load
T_VJ = 250 ^oC, I_G = 0.2 A, V_DS = 800 V,
Non Repetitive
T_C = 25 °C / 160 °C, t_p > 100 ms
Value
1200
15
5
0.2
I_D,max = 5
@ V_DS ≤ V_DSmax
> 20
30
25
106 / 10
-55 to 250
Unit Notes
V
A
A
A
A
µs
V
V
W
°C
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 7