GA05JT12-263 Datasheet, PDF (1/9 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

GA05JT12-263
Normally – OFF Silicon Carbide
Junction Transistor
Features
 175 °C maximum operating temperature
 Temperature independent switching performance
 Gate oxide free SiC switch
 Suitable for connecting an anti-parallel diode
 Positive temperature coefficient for easy paralleling
 Low gate charge
 Low intrinsic output capacitance
Package
 RoHS Compliant
D
V_DS
R_DS(ON)
I_D
= 1200 V
= 260 mΩ
= 5A
D
DS
G
TO-263
G
S
Advantages
Applications
 SiC transistor most compatible with existing Si gate-drivers
 Low switching losses
 Higher efficiency
 High temperature operation
 High short circuit withstand capability
Absolute Maximum Ratings
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Parameter
Symbol
Conditions
Value
Unit
Drain – Source Voltage
V_DS
V_GS = 0 V
1200
V
Continuous Drain Current
I_D
T_C = 150°C
5
A
Gate Peak Current
I_GM
5
A
Turn-Off Safe Operating Area
RBSOA
T_VJ = 175 ^oC, I_G = 0.25 A,
Clamped Inductive Load
I_D,max = 5
@ V_DS ≤ V_DSmax
A
Short Circuit Safe Operating Area
SCSOA
T_VJ = 175 ^oC, I_G = 1.5 A, V_DS = 70 V,
Non Repetitive
20
µs
Reverse Gate – Source Voltage
V_SG
30
V
Reverse Drain – Source Voltage
V_SD
25
V
Power Dissipation
P_tot
T_C = 150 °C
17.7
W
Storage Temperature
T_stg
-55 to 175
°C
Notes
Fig. 19
Fig. 16
Fig. 14
Electrical Characteristics
Parameter
On State Characteristics
Drain – Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
Min.
Value
Typical
Max. ^Unit
Notes
R_DS(ON)
V_GS(FWD)
β
I_D = 5 A, T_j = 25 °C
I_D = 5 A, T_j = 125 °C
I_D = 5 A, T_j = 175 °C
I_G = 500 mA, T_j = 25 °C
I_G = 500 mA, T_j = 175 °C
V_DS = 5 V, I_D = 5 A, T_j = 25 °C
V_DS = 5 V, I_D = 5 A, T_j = 125 °C
V_DS = 5 V, I_D = 5 A, T_j = 175 °C
260
368
mΩ
Fig. 5
455
3.06
2.79
V
Fig. 4
80
60
–
Fig. 5
55
V_R = 1200 V, V_GS = 0 V, T_j = 25 °C
<1
I_DSS
V_R = 1200 V, V_GS = 0 V, T_j = 125 °C
1
μA
Fig. 6
V_R = 1200 V, V_GS = 0 V, T_j = 175 °C
2
I_SG
V_SG = 20 V, T_j = 25 °C
20
nA
Jun 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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